Importance of active layer positioning on gate electrode in organic thin-film transistors

Jihwan Park (1) , Jin-Hyuk Kwon (1) , Nicolas Battaglini (2) , Philippe Lang (2) , Jin-Hyuk Bae (1) , Hyeok Kim (3)

1 KNU - Kyungpook National University [Daegu]
2 ITODYS (UMR_7086) - Interfaces, Traitements, Organisation et Dynamique des Systèmes
3 Gyeongsang National University

We describe the importance of active layer positioning for a gate electrode in organic thin-film transistors (TFTs). For this study, we utilizea numerical simulation based on 2-D Atlas, which is a two-dimensional technology computer aided design (so called 2D TCAD) software tool created by Silvaco. Variation in the electrical characteristics of pentacene TFTs is systematically explored by changing the mismatch length (L M) between the active layer and gate electrode in the bottomgate top-contact configuration. It is found that as the L M increases, the electrical performance of pentacene TFTs is exponentially degraded in terms of drain current on/off characteristics. In particular, we explain this phenomenon by examining variations in charge distribution and gate electric field in the TFT channel region byincreasing the L M .

Mots clés: electric field; mismatch length; organic thin-film transistor; Channel

Domaines: Electronique

Jihwan Park, Jin-Hyuk Kwon, Nicolas Battaglini, Philippe Lang, Jin-Hyuk Bae, et al.. Importance of active layer positioning on gate electrode in organic thin-film transistors. Molecular Crystals and Liquid Crystals, 2018, 2017 KJF International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP 2017): Part II, 660 (1), pp.72-78. ⟨10.1080/15421406.2018.1456062⟩. ⟨hal-03018112⟩