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High performance of solution-processed SnO 2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage

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https://hal-univ-paris.archives-ouvertes.fr/hal-03007484
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Submitted on : Tuesday, November 30, 2021 - 11:27:16 AM
Last modification on : Sunday, June 26, 2022 - 2:56:59 AM
Long-term archiving on: : Tuesday, March 1, 2022 - 6:00:55 PM

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Jun-Ik Park, Do-Kyung Kim, Hyunjae Lee, Jaewon Jang, Jihwan Park, et al.. High performance of solution-processed SnO 2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage. Semiconductor Science and Technology, IOP Publishing, 2020, Jun-Ik Park et al 2020 Semicond. Sci. Technol. 35 065019, 35 (6), pp.065019. ⟨10.1088/1361-6641/ab8537⟩. ⟨hal-03007484⟩

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