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TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

Abstract : In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.
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https://hal.archives-ouvertes.fr/hal-03091723
Contributor : Luca Guidoni <>
Submitted on : Thursday, December 31, 2020 - 2:47:38 PM
Last modification on : Thursday, January 7, 2021 - 3:38:12 AM

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  • HAL Id : hal-03091723, version 1
  • ARXIV : 2101.00869

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P. Zhao, J.-P. Likforman, H. Y. Li, J. Tao, T. Henner, et al.. TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing. 2020. ⟨hal-03091723⟩

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